iPhoneAlle anzeigen
iPhone 11iPhone 11 ProiPhone 11 Pro MaxiPhone 12iPhone 12 ProiPhone 12 Pro MaxiPhone 12 miniiPhone 13iPhone 13 ProiPhone 13 Pro MaxiPhone 13 miniiPhone 14iPhone 14 PlusiPhone 14 ProiPhone 14 Pro MaxiPhone 15iPhone 15 PlusiPhone 15 ProiPhone 15 Pro MaxiPhone 16iPhone 16 PlusiPhone 16 ProiPhone 16 Pro MaxiPhone 16eiPhone 8iPhone 8 PlusiPhone SE 2020iPhone SE 2022iPhone XiPhone XRiPhone XSiPhone XS Max
Galaxy A-SerieAlle anzeigen
Galaxy A12Galaxy A13Galaxy A13 5GGalaxy A14Galaxy A15Galaxy A16Galaxy A17Galaxy A17 5GGalaxy A20eGalaxy A21Galaxy A22Galaxy A23Galaxy A24Galaxy A25Galaxy A26 5GGalaxy A27 5GGalaxy A32Galaxy A33Galaxy A34Galaxy A35Galaxy A36 5GGalaxy A37Galaxy A40Galaxy A41Galaxy A42Galaxy A50Galaxy A51Galaxy A52Galaxy A53Galaxy A54Galaxy A55Galaxy A56 5GGalaxy A57 5GGalaxy A70Galaxy A71Galaxy A72
Redmi SeriesAlle anzeigen
Redmi 10Redmi 13CRedmi 15 5GRedmi Note 10Redmi Note 10 ProRedmi Note 11Redmi Note 11 ProRedmi Note 11 Pro Plus 5GRedmi Note 11sRedmi Note 12Redmi Note 12 5GRedmi Note 12 ProRedmi Note 12 Pro 5GRedmi Note 12 Pro PlusRedmi Note 13Redmi Note 13 5GRedmi Note 13 ProRedmi Note 13 Pro PlusRedmi Note 14Redmi Note 14 Pro PlusRedmi Note 15Redmi Note 15 5GRedmi Note 15 ProRedmi Note 15 Pro 5GRedmi Note 15 Pro Plus 5GRedmi Note 8 ProRedmi Note 9
- Startseite
Bücher Englische Bücher Wissen & Bildung Naturwissenschaft, Medizin, Informatik, Technik Chemie Anorganische Chemie Intermediates during the Formation of GaN under Ammonothermal Conditions
Derzeit nicht verfügbar
Handgeprüfte Gebrauchtware
Bis zu 50 % günstiger als neu
Der Umwelt zuliebe
Intermediates during the Formation of GaN under Ammonothermal Conditions
Shiyu Zhang (Gebundene Ausgabe, Englisch)
Optischer Zustand
Beschreibung
Gallium nitride as a binary compound semiconductor is featuring wide band-gap and high thermal conductivity which make it a potential material for optoelectronic devices operating within an energy spectrum from blue to ultraviolet region and high performance RF microdevices. Attracted by the wide applications and bright prospect of gallium nitride materials in nowadays semiconductor industry,… extensive research has been directed to developing and optimizing GaN single crystal growth techniques.
Ammonothermal method, allowing the growth of crystals in supercritical ammonia, is widely believed to be a promising route towards excellent bulk GaN crystals. Besides the crucial synthesis parameters such as temperature and pressure, the selection of different mineralizers is playing an important role in ammonothermal crystal growth as well. Both acidic (ammonium halides) and basic mineralizers (alkali metal amides) are commonly utilized to enhance the solubility of GaN in supercritical ammonia by the formation of soluble intermediate species.
Scientific works presented in this dissertation focus on the studies of Ga-containing ammoniate and amide compounds obtained from liquid and supercritical ammonia, which might possibly be involved in the ammonothermal growth of GaN with use of different mineralizers. As a part of the ongoing FOR-1600 project, the researches are aimed at a deeper understanding of the GaN ammonothermal growth process and roviding a foundation for developing the optimal process parameters in future. Dieses Produkt haben wir gerade leider nicht auf Lager.
Handgeprüfte Gebrauchtware
Bis zu 50 % günstiger als neu
Der Umwelt zuliebe
Technische Daten
Erscheinungsdatum
01.01.2014
Sprache
Englisch
EAN
9783843917957
Herausgeber
Dr. Hut
Autor
Shiyu Zhang
Einbandart
Gebundene Ausgabe
Höhe
210 mm
Breite
14.8 cm
-.-
★★★★★
☆☆☆☆☆ Leider noch keine Bewertungen
Leider noch keine Bewertungen
Sicher bei rebuy kaufen
Schreib die erste Bewertung für dieses Produkt!
Wenn du eine Bewertung für dieses Produkt schreibst, hilfst du allen Kund:innen, die noch überlegen, ob sie das Produkt kaufen wollen. Vielen Dank, dass du mitmachst!
Sicher bei rebuy kaufen