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Bücher Englische Bücher Wissen & Bildung Naturwissenschaft, Medizin, Informatik, Technik Technik Elektronik, Elektro- und Nachrichtentechnik Copper-Fundamental Mechanisms for Microelectronic Applications
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Copper-Fundamental Mechanisms for Microelectronic Applications
Ronald J. Gutmann (Gebundene Ausgabe, Englisch)
Optischer Zustand
Beschreibung
A complete guide to the state of the art and future direction of copper interconnect technology
Owing to its performance advantages, copper metallization for IC interconnect is attracting tremendous interest in the semiconductor community worldwide. This timely book provides scientists and engineers with a much-needed, comprehensive reference on the fundamentals and applications of this emerging… technology. The authors draw on more than a decade of intimate involvement with copper interconnect research, integrating the vast amounts of available knowledge and making clear the connection between mechanistic principles and relevant technologies. In-depth, cutting-edge discussions include:
* The effects of copper in semiconductor materials, especially silicon
* The fundamental chemistry and electro-chemistry of copper
* The effects of copper on insulating materials such as glass and polymers
* Intermetallic and interfacial reactions of copper in layered structures
* Current and projected applications of copper in integrated circuits
Copper-Fundamental Mechanisms for Microelectronic Applications also features extensive references, tables, and over 100 illustrations-including dual Damascene patterning necessary for copper interconnects. It is an excellent resource for anyone seeking to explore the current literature and gain insight into opportunities opening in the field. Dieses Produkt haben wir gerade leider nicht auf Lager.
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Technische Daten
Erscheinungsdatum
03.05.2000
Sprache
Englisch
EAN
9780471252566
Herausgeber
John Wiley & Sons
Sonderedition
Nein
Autor
Ronald J. Gutmann
Seitenanzahl
338
Auflage
1
Einbandart
Gebundene Ausgabe
Autorenporträt
SHYAM P. MURARKA, PhD, is a professor in the Department of Materials Science and Engineering at the Rensselaer Polytechnic Institute, Troy, New York.
IGOR V. VERNER, PhD, is a professor at Moscow Institute of Electronic Technology (MIET) in Russia.
RONALD J. GUTMANN, PhD, is a professor in the Department of Electrical, Computer, and Systems Engineering at Rensselaer Polytechnic Institute, Troy, New York.
Schlagwörter
Kupfer, Metallisieren, Mikroelektronik
Inhaltsverzeichnis
Overview of IC Interconnects.
Behavior of Copper Impurity Atoms.
Copper-Related Defects in Silicon.
Chemistry and Electrochemistry.
Copper in Inorganic Dielectrics.
Copper in Organic Dielectrics (Polymers).
Diffusion and Compound Formation.
Layered Structures Containing Copper.
Copper for IC Metallization.
Future Directions in Copper Technology.
Appendix.
Index.
Höhe
240 mm
Breite
16 cm
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