Noise in Nanoscale Semiconductor Devices

27.04.2020

Englisch

9783030374990

Springer International Publishing

Nein

729

1st edition 2020

Gebundene Ausgabe

Prof. Tibor Grasser is an IEEE Fellow and has been the head of the Institute for Microelectronics since 2016. He has edited various books, e.g. on advanced device modeling (World Scientific), the bias temperature instability (Springer) and hot carrier degradation (Springer), is a distinguished lecturer of the IEEE EDS, is a recipient of the Best and Outstanding Paper Awards at IRPS (2008, 2010, 2012, and 2014), IPFA (2013 and 2014), ESREF (2008) and the IEEE EDS Paul Rappaport Award (2011). He currently serves as an Associate Editor for the IEEE Transactions on Electron Devices following his assignment as Associate Editor for Microelectronics Reliability (Elsevier) and has been involved in various outstanding conferences such as IEDM, IRPS, SISPAD, ESSDERC, and IIRW. Prof. Grasser's current research interests include theoretical modeling of performance aspects of 2D and 3D devices (charge trapping, reliability), starting from the ab initio level over more efficient quantum-mechanical descriptions up to TCAD modeling. The models developed in his group have been made available in the most important commercial TCAD environments.

Random Telegraph Signals in Semiconductor Devices, Low-Frequency Noise in Advanced MOS Devices, Noise in Semiconductor Devices, Noise Analysis, Noise Simulation

TJFC - Schaltkreise und Komponenten (Bauteile) TJF - Elektronik

235 mm

15.5 cm