iPhoneAlle anzeigen
iPhone 11iPhone 11 ProiPhone 11 Pro MaxiPhone 12iPhone 12 ProiPhone 12 Pro MaxiPhone 12 miniiPhone 13iPhone 13 ProiPhone 13 Pro MaxiPhone 13 miniiPhone 14iPhone 14 PlusiPhone 14 ProiPhone 14 Pro MaxiPhone 15iPhone 15 PlusiPhone 15 ProiPhone 15 Pro MaxiPhone 16iPhone 16 PlusiPhone 16 ProiPhone 16 Pro MaxiPhone 16eiPhone 8iPhone 8 PlusiPhone SE 2020iPhone SE 2022iPhone XiPhone XRiPhone XSiPhone XS Max
Galaxy A-SerieAlle anzeigen
Galaxy A12Galaxy A13Galaxy A13 5GGalaxy A14Galaxy A15Galaxy A16Galaxy A17 5GGalaxy A20eGalaxy A21Galaxy A22Galaxy A23Galaxy A24Galaxy A25Galaxy A26 5GGalaxy A32Galaxy A33Galaxy A34Galaxy A35Galaxy A36 5GGalaxy A40Galaxy A41Galaxy A42Galaxy A50Galaxy A51Galaxy A52Galaxy A53Galaxy A54Galaxy A55Galaxy A56 5GGalaxy A70Galaxy A71Galaxy A72
Redmi SeriesAlle anzeigen
Redmi 10Redmi 13CRedmi 15 5GRedmi Note 10Redmi Note 10 ProRedmi Note 11Redmi Note 11 ProRedmi Note 11 Pro Plus 5GRedmi Note 11sRedmi Note 12Redmi Note 12 5GRedmi Note 12 ProRedmi Note 12 Pro 5GRedmi Note 12 Pro PlusRedmi Note 13Redmi Note 13 5GRedmi Note 13 ProRedmi Note 13 Pro PlusRedmi Note 14Redmi Note 14 Pro PlusRedmi Note 8Redmi Note 8 ProRedmi Note 9Redmi Note 9 Pro
- Startseite
Bücher Englische Bücher Wissen & Bildung Naturwissenschaft, Medizin, Informatik, Technik Technik Elektronik, Elektro- und Nachrichtentechnik Hot-Carrier Reliability of MOS VLSI Circuits
Handgeprüfte Gebrauchtware
Bis zu 50 % günstiger als neu
Der Umwelt zuliebe
Hot-Carrier Reliability of MOS VLSI Circuits
Yusuf Leblebici, Sung-Mo (Steve) Kang (Broschiert, Englisch)
★★★★★
☆☆☆☆☆ Keine Bewertungen vorhanden
Optischer Zustand
Beschreibung
As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits.… Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation. 213,99 €
oder
zzgl.
Du kannst wie immer einen Kaufalarm setzen, wenn du auf das gebrauchte Buch warten möchtest.
zzgl.
Handgeprüfte Gebrauchtware
Bis zu 50 % günstiger als neu
Der Umwelt zuliebe
Technische Daten
Erscheinungsdatum
27.09.2012
Sprache
Englisch
EAN
9781461364290
Herausgeber
Springer US
Serien- oder Bandtitel
The Springer International Series in Engineering and Computer Science
Sonderedition
Nein
Autor
Yusuf Leblebici, Sung-Mo (Steve) Kang
Seitenanzahl
212
Einbandart
Broschiert
Schlagwörter
Leistungsfeldeffekttransistor, MOSFET, VLSI, circuit, diagnosis, field-effect transistor, metal oxide semiconductur field-effect transistor, modeling, physics, simulation, transistor
Thema-Inhalt
TJFC - Schaltkreise und Komponenten (Bauteile)
THR - Elektrotechnik
Höhe
235 mm
Breite
15.5 cm
Hersteller: Springer Nature Customer Service Center GmbH, Europaplatz 3, Heidelberg, Deutschland, 69115, ProductSafety@springernature.com
-.-
★★★★★
☆☆☆☆☆ Leider noch keine Bewertungen
Leider noch keine Bewertungen
Sicher bei rebuy kaufen
Schreib die erste Bewertung für dieses Produkt!
Wenn du eine Bewertung für dieses Produkt schreibst, hilfst du allen Kund:innen, die noch überlegen, ob sie das Produkt kaufen wollen. Vielen Dank, dass du mitmachst!
Sicher bei rebuy kaufen