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Bücher Wissen & Bildung Englische Bücher Naturwissenschaft, Medizin, Informatik, Technik Technik Elektronik, Elektro- und Nachrichtentechnik Hot-Carrier Reliability of MOS VLSI Circuits
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Hot-Carrier Reliability of MOS VLSI Circuits
Yusuf Leblebici, Sung-Mo (Steve) Kang (Broschiert, Englisch)
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Beschreibung
As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits.… Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation. 213,99 €
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Technische Daten
Erscheinungsdatum
27.09.2012
Sprache
Englisch
EAN
9781461364290
Herausgeber
Springer US
Serien- oder Bandtitel
The Springer International Series in Engineering and Computer Science
Sonderedition
Nein
Autor
Yusuf Leblebici, Sung-Mo (Steve) Kang
Seitenanzahl
212
Einbandart
Broschiert
Schlagwörter
Leistungsfeldeffekttransistor, MOSFET, VLSI, circuit, diagnosis, field-effect transistor, metal oxide semiconductur field-effect transistor, modeling, physics, simulation, transistor
Thema-Inhalt
TJFC - Schaltkreise und Komponenten (Bauteile)
THR - Elektrotechnik
Höhe
235 mm
Breite
15.5 cm
Transparenz & Sicherheit
Hersteller: Springer Nature Customer Service Center GmbH, Europaplatz 3, Heidelberg, Deutschland, 69115, ProductSafety@springernature.com
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