Schlagwörter
CMOS-compatibility, Fin Shape Fluctuation, FinFETs, FinFET, FinFET Quantum Mechanical Potential Modelling, FinFET Quantum Phenomena, FinFET Quantum Transport Simulation, FinFET Technologies, Device Variability, FinFETs, Electrical Transport, Funneling Transport, Gate-all-around Nanowire MOSFETs, High Voltage FinFETs for SoC Applications, Highly Scaled SiGe/Si Core/Shell Nanowire, MOSFET, Mulgi-gate FinFET, Nanofabrication, Nonplanar FinFet, Novel Nanoscale Transistors for Semiconductors, Quantized Conductance 1D Transport, Quantum Confinement, Quantum Confinement Effect of FinFET, Quantum Dots on Graphene, Quantum FinFET Electronics, Quantum FinFET and Nanotechnology, Quantum Transport, Schottky Warp-Gate Controlled Single Electron Transistor, Silicon Nanowire, Single Electron Effect, Single Electron Transistor, Graphene, Work-function Variability, FinFETs
Thema-Inhalt
PHFC - Physik der kondensierten Materie (Flüssigkeits- und Festkörperphysik)
PDT - Nanowissenschaften
TJF - Elektronik
TGMM - Technische Anwendung von elektronischen, magnetischen, optischen Materialien
TJFD - Elektronische Geräte und Materialien
TBN - Nanotechnologie
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