iPhoneAlle anzeigen
iPhone 11iPhone 11 ProiPhone 11 Pro MaxiPhone 12iPhone 12 ProiPhone 12 Pro MaxiPhone 12 miniiPhone 13iPhone 13 ProiPhone 13 Pro MaxiPhone 13 miniiPhone 14iPhone 14 PlusiPhone 14 ProiPhone 14 Pro MaxiPhone 15iPhone 15 PlusiPhone 15 ProiPhone 15 Pro MaxiPhone 16iPhone 16 PlusiPhone 16 ProiPhone 16 Pro MaxiPhone 16eiPhone 8iPhone 8 PlusiPhone SE 2020iPhone SE 2022iPhone XiPhone XRiPhone XSiPhone XS Max
Galaxy A-SerieAlle anzeigen
Galaxy A12Galaxy A13Galaxy A13 5GGalaxy A14Galaxy A15Galaxy A16Galaxy A17Galaxy A17 5GGalaxy A20eGalaxy A21Galaxy A22Galaxy A23Galaxy A24Galaxy A25Galaxy A26 5GGalaxy A32Galaxy A33Galaxy A34Galaxy A35Galaxy A36 5GGalaxy A37Galaxy A40Galaxy A41Galaxy A42Galaxy A50Galaxy A51Galaxy A52Galaxy A53Galaxy A54Galaxy A55Galaxy A56 5GGalaxy A57 5GGalaxy A70Galaxy A71Galaxy A72
Redmi SeriesAlle anzeigen
Redmi 10Redmi 13CRedmi 15 5GRedmi Note 10Redmi Note 10 ProRedmi Note 11Redmi Note 11 ProRedmi Note 11 Pro Plus 5GRedmi Note 11sRedmi Note 12Redmi Note 12 5GRedmi Note 12 ProRedmi Note 12 Pro 5GRedmi Note 12 Pro PlusRedmi Note 13Redmi Note 13 5GRedmi Note 13 ProRedmi Note 13 Pro PlusRedmi Note 14Redmi Note 14 Pro PlusRedmi Note 15Redmi Note 15 5GRedmi Note 15 ProRedmi Note 15 Pro 5GRedmi Note 15 Pro Plus 5GRedmi Note 8Redmi Note 8 ProRedmi Note 9Redmi Note 9 Pro
- Startseite
Bücher Englische Bücher Doping by Nitrogen Implantation an Characterization of Heteroepitaxial 3C-SiC Thin Films on Si and SOI Substrates
Derzeit nicht verfügbar
Handgeprüfte Gebrauchtware
Bis zu 50 % günstiger als neu
Der Umwelt zuliebe
Doping by Nitrogen Implantation an Characterization of Heteroepitaxial 3C-SiC Thin Films on Si and SOI Substrates
Walter Reichert (Broschiert, Englisch)
★★★★★
☆☆☆☆☆ Keine Bewertungen vorhanden
Optischer Zustand
Beschreibung
Doping of heteroepitaxial 3C-SiC thin films on Si substrates by nitrogen implantation was studiert during this work with the goal to obtain high electrical activation of the implanted dopant, low implantation damage in the SiC film, and high values for the carrier mobility without damaging the Si substrate. Therefore different implantation and annealing conditions were investigated with the… maximum temperatures being well below the melting point of Si (1412 degrees Celsius). The implantation temperatures ranged from room temperature to 1200 degrees Celsius and the post implantation annealing temperatures were 1200 degrees Celsius in a nitrogen atmosphere or in vacuum, or 1340 degrees Celsius in vacuum. The temperature dependent electrical activation of the implanted dopants and the free carrier mobility were determined from resistivity and Hall measurements.
The nitrogen implantation profiles were calculated using the Monte Carlo program 'TRIM'. The calculated results were verified by matching Pearson distributions to the measured SIMS profiles of samples implanted at different energies (50 - 180 keV), temperatures (room temperature - 1200 degrees Celsius), and doses (5E14 and 5E15 per square centimeter). Besides for channeling effects a good agreement between the calculated (TRIM) and measured (SIMS) curves was obtained and TRIM calculations proved to be a useful tool for simulating implantation profiles in SiC, especially since the nitrogen implantation profiles showed only little dependence on the implantation temperature.
To be able to exploit the high temperature capability of heteroepitaxial 3C-SiC films, electrical insulation of the SiC film from the substrate up to high temperatures (>400 degrees Celsius) is necessary. This was done by depositing single crystal 3C-SiC films on SOI substrates. SIMOX substrates with an implanted oxide and UNIBOND wafers with a thermal oxide were used for SiC deposition. The films grown on SOI wafers showed similar crystal quaiity as films grown on Si wafers. The SiC/SOI material system demonstrated good electrical insulation of the SiC from the bulk wafer for temperatures up to 450 degrees Celsius even though some damage, such as cavities in the Si overlayer and the buried oxide layer, was introduced into the SOI wafer during SiC deposition. The reason for the damage in the oxide layer is assumed to be the high SiC deposition temperature of approximately 1350 degrees Celsius. By lowering the deposition temperature a damage reduction was observed, i.e., the size and density of the cavities was lowered. Even though further optimization of the deposition conditions for 3C-SiC films on SOI substrates is necessary, the possibility of SiC heteroepitaxy on SOI wafers and the suitability of the new SiC/SOI material system for high temperature applications was demonstrated. Dieses Produkt haben wir gerade leider nicht auf Lager.
Handgeprüfte Gebrauchtware
Bis zu 50 % günstiger als neu
Der Umwelt zuliebe
Technische Daten
Erscheinungsdatum
01.01.1998
Sprache
Englisch
EAN
9783895742927
Herausgeber
Verlag Dr. Köster
Serien- oder Bandtitel
Wissenschaftliche Schriftenreihe Elektrotechnik
Sonderedition
Nein
Autor
Walter Reichert
Seitenanzahl
124
Einbandart
Broschiert
Bandzählung
26
Höhe
210 mm
Breite
14.8 cm
-.-
★★★★★
☆☆☆☆☆ Leider noch keine Bewertungen
Leider noch keine Bewertungen
Sicher bei rebuy kaufen
Schreib die erste Bewertung für dieses Produkt!
Wenn du eine Bewertung für dieses Produkt schreibst, hilfst du allen Kund:innen, die noch überlegen, ob sie das Produkt kaufen wollen. Vielen Dank, dass du mitmachst!
Sicher bei rebuy kaufen