Technische Daten
Erscheinungsdatum
25.03.2024
Herausgeber
Springer International Publishing
Buch Untertitel
Raman, Infrared, and Cathodoluminescence Spectroscopy
Autorenporträt
Dr. Masanobu Yoshikawa completed his doctorate in applied spectroscopy with the Fourier transform infrared (FT-IR) and Raman spectroscopy at the Osaka University in 1986. After his analytical study of the one-dimensionally conducting metal-tetracyanoquinodimethanide (M-TCNQ) with FT-IR and Raman spectroscopy at the Osaka University, he joined Toray Research Center, Inc. in 1986, which is a leading analytical service company in Japan. He has mainly studied wide-gap semiconductors such as diamond, gallium nitride, silicon carbide, using FT-IR, Raman, and cathodoluminescence. He worked for Fraunhofer-Institute in Freiburg in Germany for 6 months in 1998. Furthermore, he has served as the Japanese national project leader for development of the world-first scanning near field Raman spectroscopy (SNOM) from 2003 to 2007, entrusted by New Energy and Industrial Technology Development Organization (NEDO) in Japan and succeeded in stress characterization of Si devices with a spatial resolution of less than 100 nm. As a result, he was awarded the Advance Analytical Instrument Development prize from the Japan Society for Analytical Chemistry (JAIMA) in 2010. He is working for Toray Research Center, Inc. as a senior vice-president and a senior fellow.
Schlagwörter
Scanning Electron Transmission Microscopy, Vibrational Spectroscopy, Gallium Arsenide Devices, Strained Silicon, Indium Phosphate Devices, Terahertz Time-Domain Spectroscopy, Crystal Orientation Characterization, Stress Determination Using Raman Spectroscopy, Michelson Interferometer, Scanning Near-Field Optical Microscopy, Characterization of Semiconductors, Spectroscopy of Semiconductors, Nano-Diamond Thin Films
Thema-Inhalt
TJFD - Elektronische Geräte und Materialien
TGMT - Werkstoffprüfung
PNFS - Spektroskopie, Spektrochemie, Massenspektrometrie
TBN - Nanotechnologie
TGMM - Technische Anwendung von elektronischen, magnetischen, optischen Materialien
THR - Elektrotechnik
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