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Silicon Carbide Power Devices
Yuan Gao, Yan Zhang (Gebundene Ausgabe, Englisch)
★★★★★
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Beschreibung
This book provides comprehensive technical information on SiC power devices from multiple perspectives, covering topics from device research and development to system applications. Chapters 1 to 4 focus on the characteristics of SiC devices, initially outlining the limitations of Si power devices and explaining why SiC has superior properties at the material level. It then offers updates on the… latest developments in the SiC industry chain and products innovations, along with a detailed discussion of the characteristics and specifications of SiC Diodes and MOSFETs. Chapters 5 and 6 zoom in on SiC device testing and evaluation techniques, including CP testing, FT testing, system application testing, reliability assessment, failure analysis, and double-pulse testing. Chapters 7 to 12 focus on SiC device application technology, addressing common challenges in real applications and providing solutions. This includes voltage spikes during turn-off, crosstalk, common-mode current, common-source inductance, and driver circuits, concluding with case studies of SiC device applications in various scenarios. The book can serve as a textbook for higher education and vocational training, as well as a reference material for engineers in the power semiconductor and electrical electronics industries. To make the book genuinely helpful for readers, the authors have invested significant effort in content and data selection. First, the chosen technical points come from real-world requirements in device R&D and applications. Second, the book emphasizes practicality while integrating cutting-edge developments, detailing research outcomes with industrial potential. Third, the book offers a wealth of data and waveforms, most of which are actual measurements, to bridge the gap between theory and practice. Lastly, extensive further reading materials are provided at the end of each chapter for broader and deeper exploration. Dieses Produkt haben wir gerade leider nicht auf Lager.
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Technische Daten
Erscheinungsdatum
01.09.2025
Sprache
Englisch
EAN
9789819634798
Herausgeber
Springer Singapore
Serien- oder Bandtitel
CPSS Power Electronics Series
Sonderedition
Nein
Autor
Yuan Gao, Yan Zhang
Seitenanzahl
663
Einbandart
Gebundene Ausgabe
Buch Untertitel
Characteristics, Test and Application
Schlagwörter
Silicon Carbide, SiC MOSFET, Wide band gap device, Power Semiconductor Device, Double pulse test, Crosstalk, Drive Circuit, Switching Characteristic, Device Characterization, Power Convertor Design
Thema-Inhalt
THR - Elektrotechnik
TJFD - Elektronische Geräte und Materialien
TJFC - Schaltkreise und Komponenten (Bauteile)
Höhe
235 mm
Breite
15.5 cm
Hersteller: Springer, Europaplatz 3, Heidelberg, Deutschland, 69115, ProductSafety@springernature.com, Springer Nature Customer Service Center GmbH
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