Low Dielectric Constant Materials for IC Applications

14.11.2002

Englisch

9783540678199

Springer Berlin

Springer Series in Advanced Microelectronics

Nein

310

Gebundene Ausgabe

9

Dielectric Materials, Integrated circuit manufacture, Interconnects, Low dielectric constant, Permittivity, Semiconductor, integrated circuit, packaging, plasma etching, thin film

TJF - Elektronik TGMM - Technische Anwendung von elektronischen, magnetischen, optischen Materialien TGMT - Werkstoffprüfung

1 Overview on Low Dielectric Constant Materials for IC Applications.- 1.1 Introduction.- 1.2 Dielectric Constant and Bonding Characteristics.- 1.3 Material Properties and Integration Requirements.- 1.4 Characterization of Low-? Dielectrics.- 1.5 Porous Low-? Materials.- 1.6 Conclusion.- References.- 2 Materials Issues and Characterization of Low-? Dielectric Materials.- 2.1 Introduction.- 2.2 Thin-Film Material Characterization.- 2.3 General Structure-Property Relationships.- 2.3.1 Dielectric Constant.- 2.3.2 Thermal Properties.- 2.3.3 Moisture Uptake.- 2.3.4 Thermomechanical and Thermal Stress Properties.- 2.4 Fluorinated Polyimide: Effect of Chemical-Structure Modifications on Film Properties.- 2.5 Crosslinked and Thermosetting Materials.- 2.6 Parylene Polymers: Effect of Thermal History on Film Properties.- 2.7 Future Challenges.- References.- 3 Structure and Property Characterization of Low-? Dielectric Porous Thin Films Determined by X-Ray Reflectivity and Small-Angle Neutron Scattering.- 3.1 Introduction.- 3.2 Two-Phase Methodology.- 3.2.1 Experimental.- 3.2.2 Two-Phase Analysis Using the Debye Model.- 3.2.3 Results and Discussion.- 3.3 Three-Phase Methodology.- 3.4 Films with Ordered Porous Structure.- 3.5 Limits of SANS Characterization Methods.- 3.6 Future Developments.- 3.6.1 Contrast Variation SXR.- 3.6.2 Inhomogeneous Wall Composition.- 3.7 Conclusion.- References.- 4 Vapor Deposition of Low-? Polymeric Dielectrics.- 4.1 Introduction.- 4.2 Vapor-Phase Deposition and Polymerization on Substrates.- 4.3 Parylenes.- 4.3.1 Synthesis Review.- 4.3.2 Properties of Parylene-N.- 4.3.3 Mechanisms and Models of Parylene Polymerization.- 4.3.4 Integration Issues with Parylene-N.- 4.3.5 Synthesis and Properties of Parylene-F.- 4.3.6 Integration Issues with Parylene-F.- 4.4 Polynaphthalene and Its Derivatives.- 4.4.1 Experimental System for Polynaphthalene Synthesis.- 4.4.2 Properties of Polynaphthalene and Fluorinated Polynaphthalene.- 4.5 Teflon and Its Derivatives.- 4.5.1 Synthesis of Teflon-AF.- 4.5.2 Properties of Teflon-AF.- 4.5.3 Integration Issues with Teflon.- 4.6 Vapor-Deposited Polyimides.- 4.7 Prospects for Vapor-Depositable Low-? Polymers.- References.- 5 Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-? Materials.- 5.1 Introduction.- 5.2 FSG Films.- 5.2.1 Introduction.- 5.2.2 General Characteristics.- 5.2.3 HDP-CVD FSG Film.- 5.3 a-C:F Films.- 5.3.1 Introduction.- 5.3.2 Deposition of a-C:F by PE-CVD and Controlling Fluorine Concentration.- 5.3.3 Control of F/C Ratio by Helicon-Wave HDP-CVD.- 5.3.4 Mechanism of the Reduction of the Dielectric Constant of a-C:F.- 5.3.5 Signal-Delay Measurements of CMOS Circuits.- 5.3.6 Conclusion.- References.- 6 Porous Organosilicates for On-Chip Applications: Dielectric Generational Extendibility by the Introduction of Porosity.- 6.1 Introduction.- 6.2 Porous Silica.- 6.3 Organosilicates.- 6.4 Porogens.- 6.5 Porous Organosilicate Matrix Resins.- 6.6 Formation of Nanohybrids.- 6.7 Porous Organosilicates.- 6.8 Characterization of Porous Organosilicates.- 6.9 Conclusion.- References.- 7 Metal/Polymer Interfacial Interactions.- 7.1 Introduction.- 7.2 Experimental Methods.- 7.2.1 XPS and AES Analysis.- 7.2.2 XPS for Nucleation Modes.- 7.2.3 Other Surface-Science Techniques.- 7.2.4 Metal-Deposition Techniques.- 7.3 Metallization of Fluoropolymers.- 7.3.1 Metal Evaporation.- 7.3.2 Sputter Deposition.- 7.3.3 Aluminum MOCVD.- 7.3.4 Copper MOCVD.- 7.4 Polymers on Metals: Adhesion to Cu.- 7.4.1 Introduction to SiC films.- 7.4.2 Vinyl Silane-Derived Films on Cu.- 7.5 Conclusion.- References.- 8 Diffusion of Metals in Polymers and During Metal/Polymer Interface Formation.- 8.1 Introduction.- 8.2 Thermodynamic Considerations.- 8.3 Effect of Metal-Polymer Interaction on the Mobility of Metal Atoms.- 8.4 Surface Diffusion, Nucleation, and Growth of Metal Films.- 8.5 Diffusion and Aggregation.- 8.6 Atomic Diffusion.- 8.7 Conclusion.- References.- 9 Plasma Etching of Low Dielectric Constant Materials.- 9.1 Introduction.- 9.2 Technological Requirements and Patterning Approaches.- 9.2.1 Damascene Processing.- 9.2.2 Plasma Etching.- 9.2.3 Important Low Dielectric Constant Materials.- 9.3 Fluorocarbon-Based Etching Processes.- 9.3.1 Fluorine-Doped SiO2(SiOF), Hydrogen Silsequioxane (HSQ) and Methyl Silsequioxane (MSQ).- 9.3.2 Porous Silica Films.- 9.4 Directional Etching of Organic Low-? Materials.- 9.4.1 Hydrocarbon-Based Organic Materials: Etching of Olyarylene Ether (PAE-2) in Ar/O2/N2Gas Mixtures..- 9.4.2 Fluorocarbon-Based Organic Materials: Polytetrafluoroethylene.- 9.4.3 Hybrid Materials.- 9.5 Postetch Mask-Stripping and Via-Cleaning Processes.- 9.6 Conclusion.- References.- 10 Integration of SiLK Semiconductor Dielectric.- 10.1 Introduction.- 10.2 SiLK Semiconductor Dielectric.- 10.3 Subtractive Technologies.- 10.3.1 Introduction.- 10.3.2 Integration Flow for Subtractive Interconnects.- 10.3.3 Integration Unit Steps.- 10.3.4 Electrical Results.- 10.3.5 Conclusion.- 10.4 Damascene Technologies.- 10.4.1 Introduction.- 10.4.2 Embedded-Hardmask Approach for Dual Damascene.- 10.4.3 Dual Damascene Schemes with Multilayered Hardmasks.- 10.5 Cost-of-Ownership.- 10.6 Conclusion.- References.

235 mm

15.5 cm